2N2218A silicon npn transisto r data sheet description sem i coa sem i conductors offers: ? screening and processing per mil-prf-19500 appendi x e ? jan level (2N2218Aj) ? jantx level (2N2218Ajx) ? jantxv level (2N2218Ajv) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 m e thod 2072 for jantxv ? radiation testing (total dose) upon request please contact sem i coa for speci al confi gurat i ons www. semicoa .com or (714) 979-1900 applications ? general purpose ? low power ? npn silico n tran sisto r features ? herm etically sealed to-39 m e tal can ? al so avai l a bl e i n chi p confi gurat i on ? c h i p geom et ry 0400 ? r e ference docum ent : m i l-pr f-19500/ 251 benefits ? qu alificatio n lev e ls: jan, jantx, an d jantxv ? r a di at i on t e st i ng avai l a bl e absolute maximum ratings t c = 2 5 c u n l ess o t h e rw ise sp ecified p a r a m e t e r s y m b o l r a t i n g u n i t co llecto r-em itter vo ltag e v ceo 5 0 vo lts collector-base voltage v cbo 7 5 vo lts em itter-base vo ltag e v ebo 6 vo lts c o l l ect or c u rrent , c ont i nuous i c 8 0 0 ma power di ssi pat i on, t a = 25 o c derat e l i n earl y above 25 o c p t 0.8 4.6 w mw / c power di ssi pat i on, t c = 25 o c derat e l i n earl y above 25 o c p t 3.0 17.0 w mw / c operat i ng junct i on tem p erat ure t j -55 t o +200 c storage tem p erature t stg -55 t o +200 c copy right ? 2002 semicoa semiconductors, inc. rev. k 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 2 www. sem icoa .com
copyright ? 2002 semicoa semiconductors, inc. rev. k 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. semicoa .com 2N2218A silicon npn transisto r data sheet electrical characteristics characteristics specified at t a = 25 q c off characteristics parameter symbol test conditions min typ max units collector-emitter breakdown voltage v (br)ceo i c = 10 ma 50 volts collector-base cutoff current i cbo1 v cb = 75 volts 10 p a collector-base cutoff current i cbo2 v cb = 60 volts 10 na collector-base cutoff current i cbo3 v cb = 60 volts, t a = 150 o c 10 p a collector-emitter cutoff current i ces v ce = 50 volts 10 na emitter-base cutoff current i ebo1 v eb = 6 volts 10 p a emitter-base cutoff current i ebo2 v eb = 4 volts 10 na on characteristics pulse test: pulse width = 300 p s, duty cycle d 2.0% parameter symbol test conditions min typ max units dc current gain h fe1 h fe2 h fe3 h fe4 h fe5 h fe6 i c = 0.1 ma, v ce = 10 volts i c = 1.0 ma, v ce = 10 volts i c = 10 ma, v ce = 10 volts i c = 150 ma, v ce = 10 volts i c = 500 ma, v ce = 10 volts i c = 10 ma, v ce = 10 volts t a = -55 o c 30 75 100 100 30 35 325 300 base-emitter saturation voltage v besat1 v besat2 i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.6 1.2 2.0 volts collector-emitter saturation voltage v cesat1 v cesat2 i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.3 1.0 volts dynamic characteristics parameter symbol test conditions min typ max units magnitude ? common emitter, short circuit forward curre nt transfer ratio |h fe | v ce = 20 volts, i c = 20 ma, f = 100 mhz 2.5 12 small signal short circuit forward current transfer ratio h fe v ce = 10 volts, i c = 1 ma, f = 1 khz 75 open circuit output capacitance c obo v cb = 10 volts, i e = 0 ma, 100 khz < f < 1 mhz 8 pf open circuit input capacitance c ibo v eb = 0.5 volts, i c = 0 ma, 100 khz < f < 1 mhz 25 pf switching characteristics saturated turn-on time t on 35 ns saturated turn-off time t off 300 ns
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